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HYB31645400ATL - 16M x 4-Bit Dynamic RAM High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32

HYB31645400ATL_870049.PDF Datasheet
 
Part No. HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB3164400AT-50 HYB3164400AT-40 HYB3165400ATL-40 HYB3165400AT-40 HYB3164400ATL-40 HYB3165400AJ-60
Description 16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
File Size 252.48K  /  26 Page  

Maker

Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG

Homepage http://www.automation.siemens.com/semiconductor/in
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 Full text search : 16M x 4-Bit Dynamic RAM High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32

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